Part Number | IRFH5210TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Lite-On Technology |
Description | MOSFET N-CH 100V 10A 8-PQFN |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2570pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 14.9 mOhm @ 33A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerVDFN |
Image |
Hot Offer
IRFH5210TRPBF
LITONE
8000
1.48
MEMORY CO., LTD.
IRFH5210TRPBF
LITEO
2660
2.0475
Shenzhen Xinxin Intelligent Electronics Co., Ltd
IRFH5210TRPBF
LITE-ONINC
12500
2.615
SUNTOP SEMICONDUCTOR CO., LIMITED
IRFH5210TRPBF
LIETON
10000
3.1825
N&S Electronic Co., Limited
IRFH5210TRPBF
LITTEON
5800
3.75
Hong Kong YST Electronics Co., Limited